THz-TDS study on the sulfur doping effect in the properties of GaSe<sub>1-x</sub>S<sub>x</sub>

Arvin Lester C. Jusi; Der Jun Jang; Yi Ying Lu; Ching Hwa Ho; Li Wei Tu; Wen Ching Chao; Alvin Karlo G. Tapia

VOLUME 17 NUMBER 2 (July to December 2024)

PSL%202021 vol14-no01-p12-28-Mikita%20and%20Padlan

SciEnggJ. 2024 17 (2) 257-262
available online: December 9, 2024
DOI: https://doi.org/10.54645/2024172RGA-66

*Corresponding author
Email Address: acjusi@up.edu.ph
Date received: April 25, 2024
Date revised: June 26, 2024
Date accepted: July 22, 2024

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ARTICLE

THz-TDS study on the sulfur doping effect in the properties of GaSe_1-xS_x

Arvin Lester C. Jusi*^1,3, Der Jun Jang¹, Yi Ying Lu¹, Ching Hwa Ho², Li Wei Tu¹, Wen Ching Chao¹, and Alvin Karlo G. Tapia³

¹Department of Physics, National Sun Yat-sen University,
     Kaohsiung City, Taiwan
²Graduate Institute of Applied Science and Technology,
     National Taiwan University of Science and Technology,
     Taipei, Taiwan
³Institute of Physics, University of the Philippines Los Baños,
     Los Baños, Laguna, Philippines

KEYWORDS: Terahertz time-domain spectroscopy, sulfur-doped GaSe, stacking type transition, THz absorption and conductivity, Drude fitting

The optical and electrical properties of GaSe_1-xS_x samples in the terahertz range were obtained using terahertz time-domain spectroscopy (THz-TDS). Results showed that the properties of the GaSe1-xSx samples approach that of GaS as the amount of sulfur increases. This behavior is linked to the stacking type transition of the GaSe_1-xS_x samples due to incorporation of sulfur. The THz absorption and conductivity of the GaSe_0.9S_0.1 sample were also observed to be lower than GaSe, but further addition of sulfur has led to the increase of THz absorption and conductivity. The carrier concentration and mobility obtained from Drude fitting of the conductivity have shown consistency with the behavior of the GaSe_1-xS_x samples with increasing amounts of sulfur.