VOLUME 19 NUMBER 2 (July to December 2026)

PSL%202021 vol14-no01-p12-28-Mikita%20and%20Padlan

SciEnggJ. 2026 19 (2) 433-442
available online: 19 October 2026
DOI: https://doi.org/10.54645/2026192XPP-26

Email Address: adeep2000@gmail.com
Date received: 03 June 2026
Dates revised: 08 August 2026; 01 September 2026
Date accepted: 17 September 2026

ARTICLE

Fabrication and characterization of hexagonal boron nitride/polypropylene composites using maleic anhydride compatibilizer for microelectronic applications

Akash Deep Kushwaha*1, Shailendra Kumar Bohidar1, Abhishek Kumar Jain1, Jadhav Vijay Baban2, Sheetal Gajjalwar2, Vijay Patle3, Deepak Funde3, Rakshit Kumar Sisodiya4, and Payal4

1Department of Mechanical Engineering, Mahaveer Academy of Technology and Science University, Raipur, 493441 India

2Department of Mechanical Engineering, Sanjivani Pratishthan Institute of Technology Polytechnic, Kurund, 414306 India

3School of Engineering &Technology, Sardar Patel University, Balaghat, 481001 India

4Department of Aeronautical Engineering, Mahaveer Academy of Technology and Science University, Raipur, 493441 India

KEYWORDS: Composite materials, Dielectric properties, Mechanical Properties, Microstructure, Thermal properties, Microelectronics applications

This work investigated composites prepared using a polypropylene (PP) matrix and hexagonal boron nitride (hBN) filler for microelectronic applications. The influence of filler loading (10–40 wt%) and compatibilization using maleic anhydride-grafted polypropylene (MAPP) was studied. MAPP-modified composites showed improved hBN dispersion and interfacial compatibility with the PP matrix, as verified by SEM images. Experimental results showed that hBN addition increased density, void content, and water absorption; however, MAPP reduced the increases in void content and water uptake. Tensile and flexural strengths reached maxima at approximately 25 wt% hBN, whereas compressive strength and hardness continued to increase with filler loading. Thermal conductivity increased markedly with hBN content, while the coefficient of thermal expansion decreased. At 40 wt% hBN with MAPP, thermal conductivity reached approximately 1.85 Wm-1K-1, corresponding to approximately 6.2 times the thermal conductivity of neat PP. Dielectric properties showed marginal increases with filler loading but remained within ranges considered suitable for potential microelectronic applications. Overall, the developed PP/hBN/MAPP composites demonstrate strong potential for thermal management in microelectronics.

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